publication order number: ntf5p03t3/d ? semiconductor components industries, llc, 2011 october, 2011 ? rev. 5 1 NTF5P03T3G, nvf5p03t3g power mosfet 5.2 a, 30 v p ? channel sot ? 223 features ? ultra low r ds(on) ? higher efficiency extending battery life ? logic level gate drive ? miniature sot ? 223 surface mount package ? avalanche energy specified ? aec ? q101 qualified and ppap capable ? nvf5p03t3g ? these devices are pb ? free and are rohs compliant applications ? dc ? dc converters ? power management ? motor controls ? inductive loads ? replaces mmft5p03hd 1 2 3 4 5.2 amperes, 30 volts r ds(on) = 100 m device package shipping ? ordering information sot ? 223 case 318e style 3 marking diagram & pin assignment http://onsemi.com ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. 5p03 a = assembly location y = year m = date code 5p03 = specific device code = pb ? free package aym 1 gate 2 drain 3 source drain 4 (note: microdot may be in either location) sot ? 223 (pb ? free) NTF5P03T3G 4000 / tape & reel g s d p ? channel mosfet sot ? 223 (pb ? free) nvf5p03t3g 4000 / tape & reel
NTF5P03T3G, nvf5p03t3g http://onsemi.com 2 maximum ratings (t j = 25 c unless otherwise noted) negative sign for p ? channel devices omitted for clarity rating symbol max unit drain ? to ? source voltage v dss ? 30 v drain ? to ? gate voltage (r gs = 1.0 m ) v dgr ? 30 v gate ? to ? source voltage ? continuous v gs 20 v 1 sq in fr ? 4 or g ? 10 pcb 10 seconds thermal resistance ? junction to ambient total power dissipation @ t a = 25 c linear derating factor drain current ? continuous @ t a = 25 c continuous @ t a = 70 c pulsed drain current (note 1) r thja p d i d i d i dm 40 3.13 25 ? 5.2 ? 4.1 ? 26 c/w watts mw/ c a a a minimum fr ? 4 or g ? 10 pcb 10 seconds thermal resistance ? junction to ambient total power dissipation @ t a = 25 c linear derating factor drain current ? continuous @ t a = 25 c continuous @ t a = 70 c pulsed drain current (note 1) r thja p d i d i d i dm 80 1.56 12.5 ? 3.7 ? 2.9 ? 19 c/w watts mw/ c a a a operating and storage temperature range t j , t stg ? 55 to 150 c single pulse drain ? to ? source avalanche energy ? starting t j = 25 c (v dd = ? 30 vdc, v gs = ? 10 vdc, peak i l = ? 12 apk, l = 3.5 mh, r g = 25 ) e as 250 mj stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. 1. repetitive rating; pulse width limited by maximum junction temperature.
NTF5P03T3G, nvf5p03t3g http://onsemi.com 3 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain ? to ? source breakdown voltage (cpk 2.0) (notes 2 and 4) (v gs = 0 vdc, i d = ? 0.25 adc) temperature coefficient (positive) v (br)dss ? 30 ? ? ? 28 ? ? vdc mv/ c zero gate voltage drain current (v ds = ? 24 vdc, v gs = 0 vdc) (v ds = ? 24 vdc, v gs = 0 vdc, t j = 125 c) i dss ? ? ? ? ? 1.0 ? 25 adc gate ? body leakage current (v gs = 20 vdc, v ds = 0 vdc) i gss ? ? 100 nadc on characteristics (note 2) gate threshold voltage (cpk 2.0) (notes 2 and 4) (v ds = v gs , i d = ? 0.25 adc) threshold temperature coefficient (negative) v gs(th) ? 1.0 ? ? 1.75 3.5 ? 3.0 ? vdc mv/ c static drain ? to ? source on ? resistance (cpk 2.0) (notes 2 and 4) (v gs = ? 10 vdc, i d = ? 5.2 adc) (v gs = ? 4.5 vdc, i d = ? 2.6adc) r ds(on) ? 76 107 100 150 m forward transconductance (note 2) (v ds = ? 15 vdc, i d = ? 2.0 adc) g fs 2.0 3.9 ? mhos dynamic characteristics input capacitance (v ds = ? 25 vdc, v gs = 0 v, f = 1.0 mhz) c iss ? 500 950 pf output capacitance c oss ? 153 440 transfer capacitance c rss ? 58 140 switching characteristics (note 3) turn ? on delay time (v dd = ? 15 vdc, i d = ? 4.0 adc, v gs = ? 10 vdc, r g = 6.0 ) (note 2) t d(on) ? 10 24 ns rise time t r ? 33 48 turn ? off delay time t d(off) ? 38 94 fall time t f ? 20 92 turn ? on delay time (v dd = ? 15 vdc, i d = ? 2.0 adc, v gs = ? 10 vdc, r g = 6.0 ) (note 2) t d(on) ? 16 38 ns rise time t r ? 45 110 turn ? off delay time t d(off) ? 23 60 fall time t f ? 24 80 gate charge (v ds = ? 24 vdc, i d = ? 4.0 adc, v gs = ? 10 vdc) (note 2) q t ? 15 38 nc q 1 ? 1.6 ? q 2 ? 3.5 ? q3 ? 2.6 ? source ? drain diode characteristics forward on ? voltage (i s = ? 4.0 adc, v gs = 0 vdc) (i s = ? 4.0 adc, v gs = 0 vdc, t j = 125 c) (note 2) v sd ? ? ? 1.1 ? 0.89 ? 1.5 ? vdc reverse recovery time (i s = ? 4.0 adc, v gs = 0 vdc, di s /dt = 100 a/ s) (note 2) t rr ? 34 ? ns t a ? 20 ? t b ? 14 ? reverse recovery stored charge q rr ? 0.036 ? c 2. pulse test: pulse width 300 s, duty cycle 2.0%. 3. switching characteristics are independent of operating junction temperatures. 4. reflects typical values. cpk max limit typ 3 sigma
NTF5P03T3G, nvf5p03t3g http://onsemi.com 4 typical electrical characteristics figure 1. on ? region characteristics figure 2. transfer characteristics figure 3. on ? resistance versus gate ? to ? source voltage figure 4. on ? resistance versus drain current and gate voltage figure 5. on ? resistance variation with temperature figure 6. drain ? to ? source leakage current versus voltage ? v gs, gate ? to ? source voltage (v) ? i d, drain current (a) t j = 25 c t j = 100 c t j = ? 55 c ? v gs, gate ? to ? source voltage (v) r ds(on), drain ? to ? source resistance ( ) ? i d, drain current (a) r ds(on), drain ? to ? source resistance ( ) v gs = ? 10 v t j , junction temperature ( c) r ds(on), drain ? to ? source resistance (normalized) i d = ? 5.2 a v gs = ? 10 v ? v ds, drain ? to ? source voltage (v) ? i dss , leakage (na) ? v ds, drain ? to ? source voltage (v) ? i d, drain current (a) v gs = ? 2.7 v t j = 100 c t j = 25 c v ds ? 10 v v gs = 0 v t j = 125 c ? 3.1 v ? 2.8 v ? 3.5 v ? 3.7 v t j = 25 c v gs = ? 4.5 v 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 ? 3.9 v ? 4.1 v ? 4.3 v ? 4.5 v ? 6 v ? 8 v ? 10 v 0 1 2 3 4 5 6 7 8 9 10 22.533.544.55 0.025 0.050 0.075 0.100 0.125 0.150 0.175 0.200 345678910 i d = ? 5.2 a t j = 25 c 0.000 0.020 0.040 0.060 0.080 0.100 0.120 0.140 0.160 0.180 0.200 1 2.5 4 5.5 7 8.5 10 0.65 0.75 0.85 0.95 1.05 1.15 1.25 1.35 1.45 1.55 1.65 ? 50 ? 25 0 25 50 75 100 125 150 10 100 1000 5 1015202530
NTF5P03T3G, nvf5p03t3g http://onsemi.com 5 typical electrical characteristics r ds(on) limit 100 1 0.1 0.01 1000 100 10 12.5 5.0 2.5 0 drain ? to ? source voltage (v) c, capacitance (pf) q g , total gate charge (nc) figure 7. capacitance variation figure 8. gate ? to ? source and drain ? to ? source voltage versus total charge ? v gs , gate ? to ? source voltage (v) figure 9. resistive switching time variation versus gate resistance r g , gate resistance ( ) figure 10. diode forward voltage versus current ? v sd , source ? to ? drain voltage (v) ? i s , source current (a) t, time (ns) figure 11. maximum rated forward biased safe operating area ? v ds , drain ? to ? source voltage (volts) figure 12. maximum avalanche energy versus starting junction temperature t j , starting junction temperature ( c) ? i d , drain current (amps) e as , single pulse drain ? to ? source avalanche energy (mj) 050 40 20 60 1 10 100 0.1 10 100 1 i d = ? 2 a t j = 25 c ? v gs c iss c oss c rss v gs = 20 v single pulse t c = 25 c v dd = ? 15 v i d = ? 4.0 a v gs = ? 10 v v gs = 0 v t j = 25 c i d = ? 6 a 1 ms 100 s 10 ms dc t r t d(off) t d(on) q 2 q 1 q t 30 10 t f thermal limit package limit 7.5 10 10 ? v ds ? v ds , drain ? to ? source voltage (v) 10 s mounted on 2?sq. fr4 board (1?sq. 2 oz. cu 0.06? thick single sided) with on die operating, 10 s max. 0 5 10 15 20 25 0 100 200 300 400 500 600 700 800 900 1000 0 5 10 15 20 25 30 t j = 25 c v gs = 0 v 0.00 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 0 50 100 150 200 250 25 50 75 100 125 15 0
NTF5P03T3G, nvf5p03t3g http://onsemi.com 6 typical electrical characteristics r thja(t) , effective transient thermal response figure 13. fet thermal response t, time (s) 0.1 0.01 d = 0.5 single pulse 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.2 0.1 0.05 0.02 0.01 1.0e+02 1.0e+03 1 normalized to r ja at steady state (1 pad) chip junction 0.0175 0.0154 f 0.0710 0.0854 f 0.2706 0.3074 f 0.5779 1.7891 f 0.7086 107.55 f ambient
NTF5P03T3G, nvf5p03t3g http://onsemi.com 7 package dimensions sot ? 223 (to ? 261) case 318e ? 04 issue n a1 b1 d e b e e1 4 123 0.08 (0003) a l1 c notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inch. 1.5 0.059 mm inches scale 6:1 3.8 0.15 2.0 0.079 6.3 0.248 2.3 0.091 2.3 0.091 2.0 0.079 soldering footprint h e dim a min nom max min millimeters 1.50 1.63 1.75 0.060 inches a1 0.02 0.06 0.10 0.001 b 0.60 0.75 0.89 0.024 b1 2.90 3.06 3.20 0.115 c 0.24 0.29 0.35 0.009 d 6.30 6.50 6.70 0.249 e 3.30 3.50 3.70 0.130 e 2.20 2.30 2.40 0.087 0.85 0.94 1.05 0.033 0.064 0.068 0.002 0.004 0.030 0.035 0.121 0.126 0.012 0.014 0.256 0.263 0.138 0.145 0.091 0.094 0.037 0.041 nom max l1 1.50 1.75 2.00 0.060 6.70 7.00 7.30 0.264 0.069 0.078 0.276 0.287 h e ? ? e1 0 1 0 0 1 0 l l 0.20 ??? ??? 0.008 ??? ??? style 3: pin 1. gate 2. drain 3. source 4. drain on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 ntf5p03t3/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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